Datasheet SI4511DY-T1-E3 - Vishay DUAL N/P CHANNEL MOSFET, 20 V, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL N/P CHANNEL MOSFET, 20 V, SOIC

Specifications:

• Continuous Drain Current Id: 9.6 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 14.5 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Polarity: N and P Channel

RoHS: Y-Ex

Andere Namen:

SI4511DYT1E3, SI4511DY T1 E3