Datasheet SI3900DV-T1-GE3 - Vishay DUAL N CHANNEL MOSFET, 20 V, 2.4 A — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL N CHANNEL MOSFET, 20 V, 2.4 A

Specifications:

• Continuous Drain Current Id: 2.4 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 125 MOhm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI3900DVT1GE3, SI3900DV T1 GE3