Datasheet SI1905BDH-T1-E3 - Vishay P CHANNEL MOSFET, -8 V, SC-70 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -8 V, SC-70

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Docket:
Si1905BDH
Vishay Siliconix
Dual P-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8 RDS(on) () 0.542 at VGS = - 4.5 V 0.798 at VGS = - 2.5 V 1.2 at VGS = - 1.8 V ID (A) - 0.63 - 0.52 - 0.20 10.5 nC Qg (Typ.)

Simulation Model

Specifications:

• Continuous Drain Current, Id: -630 mA
• Drain Source Voltage, Vds: -8 V
• On Resistance, Rds(on): 1.2 Ohm
• Rds(on) Test Voltage, Vgs: 8 V
• Threshold Voltage, Vgs Typ: -1 V
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI1905BDHT1E3, SI1905BDH T1 E3