Datasheet SSM6N7002FU(TE85LF - Toshiba MOSFET, N CH, 0.2 A, 60 V, US6 — Datenblatt

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Manufacturer: Toshiba

Description: MOSFET, N CH, 0.2 A, 60 V, US6

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Docket:
SSM6N7002FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N7002FU
High Speed Switching Applications Analog Switch Applications
· · Small package Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) Unit: mm

Specifications:

• Continuous Drain Current Id, N Channel: 200 mA
• Continuous Drain Current Id: 200 mA
• Current Id Max: 200 mA
• Drain Source Voltage Vds, N Channel: 60 V
• Drain Source Voltage Vds: 60 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on), N Channel: 2.2 Ohm
• On Resistance Rds(on): 3 Ohm
• Package / Case: US6
• Power Dissipation: 300 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: US6
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes