Datasheet SQJ970EP-T1-GE3 - Vishay MOSFET, NN CH, W DIODE, 40 V, 8 A, POPAK8L — Datenblatt
Part Number: SQJ970EP-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, NN CH, W DIODE, 40 V, 8 A, POPAK8L
Docket:
SQJ970EP
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) per leg Configuration
Specifications:
- Continuous Drain Current Id: 8 A
- Drain Source Voltage Vds: 40 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 0.016 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 48 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 2 V
- Transistor Case Style: PowerPAK SO
- Transistor Polarity: N Channel
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
- International Rectifier - IRF7469PBF
Andere Namen:
SQJ970EPT1GE3, SQJ970EP T1 GE3