Datasheet SIR770DP-T1-GE3 - Vishay MOSFET, NN CH, SC DIO, 30 V, 8 A, PPAKS08 — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, NN CH, SC DIO, 30 V, 8 A, PPAKS08

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Docket:
SiR770DP
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS Channel-1 Channel-2 30 30 RDS(on) () 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)

Specifications:

• Current Id Max: 8 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 17500µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 3.6 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2.8 V
• Transistor Case Style: SOIC PowerPAK
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fairchild - FDFS6N754
• Fischer Elektronik - FK 244 13 D2 PAK

Andere Namen:

SIR770DPT1GE3, SIR770DP T1 GE3