Datasheet SI9934BDY-T1-GE3 - Vishay MOSFET, PP CH, 12 V, 4.8 A, 8SOIC — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, PP CH, 12 V, 4.8 A, 8SOIC

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Docket:
Si9934BDY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 12 RDS(on) () 0.035 at VGS = - 4.5 V 0.056 at VGS = - 2.5 V ID (A) - 6.4 - 5.1

Specifications:

• Current Id Max: -4.8 A
• Drain Source Voltage Vds: -12 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 28 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.1 W
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -1.4 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI9934BDYT1GE3, SI9934BDY T1 GE3