Datasheet SI9926CDY-T1-E3 - Vishay MOSFET, DUAL, NN, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, NN, SO-8

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Docket:
New Product
Si9926CDY
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 8 A
• Current Id Max: 8 A
• Drain Source Voltage Vds: 20 V
• Junction Temperature Tj Max: 150°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 18 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SO-8
• Power Dissipation: 3.1 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Rise Time: 10 ns
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1.5 V
• Voltage Vgs th Min: 0.6 V

RoHS: Yes

Andere Namen:

SI9926CDYT1E3, SI9926CDY T1 E3