Datasheet SI7942DP-T1-E3 - Vishay MOSFET, DUAL, NN, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, NN, SO-8

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Docket:
Si7942DP
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.049 at VGS = 10 V 0.060 at VGS = 6 V ID (A) 5.9 5.5

Specifications:

• Continuous Drain Current Id: 5.9 A
• Current Id Max: 5.9 A
• Drain Source Voltage Vds: 100 V
• Junction Temperature Tj Max: 150°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 49 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SO-8
• Power Dissipation: 1.4 W
• Rds(on) Test Voltage Vgs: 20 V
• Rise Time: 15 ns
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Voltage Vgs th Min: 2 V

RoHS: Yes

Andere Namen:

SI7942DPT1E3, SI7942DP T1 E3