Datasheet SI4948BEY-T1-GE3 - Vishay MOSFET, PP-CH, 60 V, 3.1 A, SO8 — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, PP-CH, 60 V, 3.1 A, SO8

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Docket:
Si4948BEY
Vishay Siliconix
Dual P-Channel 60-V (D-S) 175° MOSFET
PRODUCT SUMMARY
VDS (V) - 60 RDS(on) () 0.120 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A) - 3.1 - 2.8

Specifications:

• Current Id Max: -3.1 A
• Drain Source Voltage Vds: -60 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 100 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 2.4 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SI4948BEYT1GE3, SI4948BEY T1 GE3