Datasheet SI4946BEY-T1-E3 - Vishay MOSFET, DUAL, N, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, N, SOIC

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Specifications:

• Base Number: 4946
• Continuous Drain Current Id: 6.5 A
• Current Id Max: 6.5 A
• Drain Source Voltage Vds: 60 V
• Module Configuration: Dual
• Mounting Type: SMD
• N-channel Gate Charge: 9.2nC
• Number of Pins: 8
• On Resistance Rds(on): 41 MOhm
• On State Resistance @ Vgs = 4.5V: 52 MOhm
• On State resistance @ Vgs = 10V: 41 MOhm
• Operating Temperature Range: -50°C to +175°C
• Package / Case: SOIC
• Power Dissipation: 2.4 W
• Rds(on) Test Voltage Vgs: 20 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 2.4 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

SI4946BEYT1E3, SI4946BEY T1 E3