Datasheet SI4936CDY-T1-GE3 - Vishay MOSFET, NN-CH, 30 V, 5.8 A, SO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, NN-CH, 30 V, 5.8 A, SO8

Download Data Sheet

Docket:
New Product
Si4936CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 5.8 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 33 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2.3 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: Dual N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SI4936CDYT1GE3, SI4936CDY T1 GE3