Datasheet SI4900DY-T1-GE3 - Vishay MOSFET, NN CH, DIODE, 60 V, 5.3 A, 8-SOIC — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, NN CH, DIODE, 60 V, 5.3 A, 8-SOIC

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Docket:
Si4900DY
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.058 at VGS = 10 V 0.072 at VGS = 4.5 V ID (A)a 5.3 4.7 Qg (Typ.) 13 nC

Specifications:

• Current Id Max: 4.3 A
• Drain Source Voltage Vds: 60 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 0.046 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Diodes - ZXMN6A11DN8TA
• Fischer Elektronik - FK 244 13 D2 PAK

Andere Namen:

SI4900DYT1GE3, SI4900DY T1 GE3