Datasheet SI4500BDY-T1-GE3 - Vishay DUAL N/P CHANNEL MOSFET, 20 V, 5.3 A — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL N/P CHANNEL MOSFET, 20 V, 5.3 A

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Docket:
Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () 0.020 at VGS = 4.5 V 0.030 at VGS = 2.5 V 0.060 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A) 9.1 7.5 - 5.3 - 4.1

Specifications:

• Continuous Drain Current Id: 7 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 22 MOhm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Polarity: Dual N & P Channel

RoHS: Y-Ex

Andere Namen:

SI4500BDYT1GE3, SI4500BDY T1 GE3