Datasheet SI1958DH-T1-E3 - Vishay MOSFET, DUAL, N, SC-70 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, N, SC-70

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Specifications:

• Base Number: 1958
• Continuous Drain Current Id: 1.3 A
• Current Id Max: 1.3 A
• Drain Source Voltage Vds: 20 V
• Module Configuration: Dual
• Mounting Type: SMD
• N-channel Gate Charge: 1.2nC
• Number of Pins: 6
• On Resistance Rds(on): 205 MOhm
• On State Resistance @ Vgs = 2.5V: 340 MOhm
• On State Resistance @ Vgs = 4.5V: 205 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-323
• Power Dissipation: 1.25 W
• Pulse Current Idm: 4 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: SOT-323
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 1.6 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1.6 V
• Voltage Vgs th Min: 0.6 V

RoHS: Yes

Andere Namen:

SI1958DHT1E3, SI1958DH T1 E3