Datasheet SI1912EDH-T1-E3 - Vishay MOSFET, NN CH, 20 V, SOT363 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, NN CH, 20 V, SOT363

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Docket:
Si1912EDH
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.280 at VGS = 4.5 V 0.360 at VGS = 2.5 V 0.450 at VGS = 1.8 V ID (A) 1.28 1.13 1.0

Specifications:

• Continuous Drain Current Id: 1.28 A
• Current Id Max: 1.28 A
• Drain Source Voltage Vds: 20 V
• Module Configuration: Dual
• Number of Pins: 6
• On Resistance Rds(on): 280 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-363
• Power Dissipation Pd: 570 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 450 mV
• Transistor Case Style: SOT-363
• Transistor Polarity: Dual N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 450 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Andere Namen:

SI1912EDHT1E3, SI1912EDH T1 E3