Datasheet SI1903DL-T1-E3 - Vishay MOSFET TRANSISTOR — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET TRANSISTOR

Specifications:

• Continuous Drain Current Id: 410 mA
• Current Id Max: 440 mA
• Drain Source Voltage Vds: -20 V
• Module Configuration: Dual
• Number of Pins: 6
• On Resistance Rds(on): 995 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: 6-SC-70
• Power Dissipation Pd: 300 mW
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -1.5 V
• Transistor Case Style: SC-70
• Transistor Polarity: P Channel
• Voltage Vds Typ: -20 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes

Andere Namen:

SI1903DLT1E3, SI1903DL T1 E3