Datasheet NDH8304P - Fairchild MOSFET, DUAL, PP, SUPERSOT-8 — Datenblatt

Fairchild NDH8304P

Part Number: NDH8304P

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, DUAL, PP, SUPERSOT-8

Docket:
May 1997
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features

Specifications:

Cont Current Id: 2.7 A
Current Temperature: 25°C
External Depth: 4.06 mm
External Length / Height: 1.02 mm
External Width: 4.55 mm
Full Power Rating Temperature: 25°C
Max Current Id: -2.7 A
Max Voltage Vds: 20 V
Max Voltage Vgs th: -2.7 V
Mounting Type: SMD
Number of Pins: 8
Number of Transistors: 2
On State Resistance: 0.095 Ohm
Package / Case: SuperSOT-8
Power Dissipation Pd: 0.8 W
Power Dissipation: 0.8 W
Pulse Current Idm: 10 A
Rds Measurement Voltage: -4.5 V
SMD Marking: NDH8304P
Transistor Case Style: Super-SOT
Transistor Polarity: Dual P
Transistor Type: MOSFET
Typ Voltage Vds: -20 V
Typ Voltage Vgs th: -0.7 V
Voltage Vds: 20 V
Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes