Datasheet IRF7314QPBF - International Rectifier MOSFET, PP SO-8 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, PP SO-8

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Docket:
PD - 96107
IRF7314QPbF
HEXFET® Power MOSFET
Typical Applications · Anti-lock Braking Systems (ABS) · Electronic Fuel Injection · Air bag Benefits · Advanced Process Technology · Dual P-Channel MOSFET · Ultra Low On-Resistance · 175°C Operating Temperature · Repetitive Avalanche Allowed up to Tjmax · Automotive [Q101] Qualified · Lead-Free Description
VDSS

Specifications:

• Continuous Drain Current Id: 5.2 A
• Current Id Max: 5.2 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 49 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2.4 W
• Pulse Current Idm: 43 A
• Rds(on) Test Voltage Vgs: -4.5 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: 20 V
• Voltage Vds: 20 V
• Voltage Vgs Max: -700 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Accessories:

• BONKOTE - BON102
• Electrolube - SMA10SL
• Roth Elektronik - RE932-01