Datasheet ZXMN3A04DN8 - Diodes MOSFET, DUAL, N, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, DUAL, N, SO-8

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Simulation Model

Specifications:

• Continuous Drain Current Id: 7.6 A
• Current Id Max: 8.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 25 MOhm
• On State Resistance Max: 25 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2.15 W
• Power Dissipation Ptot Max: 1.25 W
• Pulse Current Idm: 25 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: ZXMN3A04D
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V

RoHS: Yes