Datasheet PMWD19UN - NXP MOSFET, N, TSSOP-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N, TSSOP-8

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Docket:
PMWD19UN
Dual µTrenchMOSTM ultra low level FET
Rev.

01 -- 20 December 2002
M3D647
Product data

Specifications:

• Base Number: 4
• Capacitance Ciss Typ: 1478 pF
• Continuous Drain Current Id: 5.6 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Transistors: 2
• On Resistance Rds(on): 23 MOhm
• On State Resistance @ Vgs = 1.8V: 35 MOhm
• On State Resistance @ Vgs = 4.5V: 23 MOhm
• Package / Case: TSSOP
• Pin Configuration: D1(1), S1(2+3), G1(4), D2(8), S2(6+7), G2(5)
• Power Dissipation Pd: 2.3 W
• Pulse Current Idm: 20 A
• SMD Marking: 19UN
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: TSSOP
• Transistor Polarity: Dual N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 10 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes