Datasheet IRF7507PBF - International Rectifier MOSFET, DUAL, NP, LOGIC, MICRO-8 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, DUAL, NP, LOGIC, MICRO-8

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Docket:
PD - 95218
IRF7507PbF
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description
l l

Specifications:

• Cont Current Id N Channel 2: 2.4 A
• Cont Current Id P Channel: 1.7 A
• Continuous Drain Current Id: 2.4 A
• Current Id Max: 2.4 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• External Depth: 5.03 mm
• External Length / Height: 1.11 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 135 MOhm
• On State Resistance N Channel Max: 135 MOhm
• On State Resistance P Channel Max: 270 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: Micro8
• Power Dissipation Pd: 1.25 W
• Pulse Current Idm N Channel 2: 19 A
• Pulse Current Idm P Channel: 14 A
• Pulse Current Idm: 14 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Row Pitch: 4.24 mm
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: MicroSOIC
• Transistor Polarity: N and P Channel

RoHS: Yes