Datasheet PMWD26UN - NXP MOSFET, N, TSSOP-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N, TSSOP-8

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Docket:
PMWD26UN
Dual N-channel µTrenchMOS ultra low level FET
Rev.

02 -- 19 May 2005 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Base Number: 4
• Capacitance Ciss Typ: 1366 pF
• Continuous Drain Current Id: 7.8 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Transistors: 2
• On Resistance Rds(on): 30 MOhm
• On State Resistance @ Vgs = 1.8V: 40 MOhm
• On State Resistance @ Vgs = 4.5V: 30 MOhm
• Package / Case: TSSOP
• Pin Configuration: D1(1), S1(2+3), G1(4), D2(8), S2(6+7), G2(5)
• Power Dissipation Pd: 3.1 W
• Pulse Current Idm: 31.3 A
• SMD Marking: 26UN
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: TSSOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 10 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes