Datasheet IRF8313PBF - International Rectifier MOSFET, DUAL N-CH 30 V 9.7 A SO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, DUAL N-CH 30 V 9.7 A SO8

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Docket:
PD - 97145
IRF8313PbF
Applications
l l
HEXFET® Power MOSFET

Specifications:

• Continuous Drain Current Id: 9.7 A
• Current Id Max: 9.7 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 15.5 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.35 V

RoHS: Yes