Datasheet QS6J3TR - Rohm MOSFET, P, VGS -2.5 V — Datenblatt

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Manufacturer: Rohm

Description: MOSFET, P, VGS -2.5 V

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Specifications:

• Capacitance Ciss Typ: 270 pF
• Continuous Drain Current Id: 1.5 A
• Current Id Max: -1.5 A
• Drain Source Voltage Vds: 20 V
• Fall Time tf: 20 ns
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 430 MOhm
• Package / Case: TSMT6
• Pin Configuration: 1(S1), 2(G1), 3(D2), 4(S2), 5(G2), 6(D1)
• Power Dissipation: 1.25 W
• Pulse Current Idm: 6 A
• Rds(on) Test Voltage Vgs: -4.5 V
• Rise Time: 12 ns
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: -2 V
• Transistor Case Style: TSMT
• Transistor Polarity: P Channel
• Voltage Vds Typ: -20 V
• Voltage Vgs Max: -12 V
• Voltage Vgs Rds on Measurement: 2.5 V
• Voltage Vgs th Max: -2 V
• Voltage Vgs th Min: -0.7 V

RoHS: Yes