Datasheet IRFH7911TRPBF - International Rectifier MOSFET, NN CH, 30 V, PQFN56 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, NN CH, 30 V, PQFN56

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Docket:
PD - 97427B
IRFH7911PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)

Specifications:

• Continuous Drain Current Id: 13 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Number of Pins: 18
• On Resistance Rds(on): 0.0072 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2.4 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.35 V
• Transistor Case Style: QFN

RoHS: Yes

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