Datasheet IRF8513PBF - International Rectifier MOSFET, DUAL N-CH 30 V 8A/11A SO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, DUAL N-CH 30 V 8A/11A SO8

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Docket:
PD - 96196
IRF8513PbF
HEXFET® Power MOSFET
Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.

Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free)
V DSS

Specifications:

• Continuous Drain Current Id: 8 A
• Current Id Max: 8 mA
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 15.5 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: SOIC
• Power Dissipation Pd: 2.4 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.35 V

RoHS: Yes