Datasheet IRF7501PBF - International Rectifier MOSFET, DUAL, NN, MICRO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, DUAL, NN, MICRO-8

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Docket:
PD - 95345
IRF7501PbF
HEXFET® Power MOSFET
l l l l l l l l
Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free

Specifications:

• Continuous Drain Current Id: 2.4 A
• Current Id Max: 2.4 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.03 mm
• External Length / Height: 1.11 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Lead Spacing: 0.65 mm
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 135 MOhm
• On State Resistance Max: 135 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: Micro8
• Power Dissipation Pd: 1.25 W
• Pulse Current Idm: 19 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Row Pitch: 4.24 mm
• SMD Marking: F7501
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: MicroSOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vds: 20 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Min: 700 mV

RoHS: Yes

Accessories:

• LICEFA - V11-7
• Roth Elektronik - RE903