Datasheet IRF7105QPBF - International Rectifier MOSFET, NP SO-8 — Datenblatt

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Manufacturer: International Rectifier

Description: MOSFET, NP SO-8

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Docket:
PD - 96102
IRF7105QPbF
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free

Specifications:

• Cont Current Id N Channel 2: 3.5 A
• Cont Current Id P Channel: 2.3 A
• Continuous Drain Current Id: 3.5 A
• Current Id Max: 3.5 A
• Drain Source Voltage Vds: 25 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 83 MOhm
• On State Resistance N Channel Max: 100 MOhm
• On State Resistance P Channel Max: 250 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Pulse Current Idm N Channel 2: 21 A
• Pulse Current Idm P Channel: 17 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 25 V
• Voltage Vds: 25 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• BONKOTE - BON102
• Electrolube - SMA10SL
• Roth Elektronik - RE932-01