Datasheet FDG6304P - Fairchild TRANSISTOR, MOSFET — Datenblatt

Fairchild FDG6304P

Part Number: FDG6304P

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: TRANSISTOR, MOSFET

Docket:
July 1999
FDG6304P Dual P-Channel, Digital FET
General Description
These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features

Specifications:

Continuous Drain Current Id, P Channel: -410 mA
Continuous Drain Current Id: -410 mA
Current Id Max: -410 mA
Drain Source Voltage Vds, P Channel: -25 V
Drain Source Voltage Vds: -25 V
Module Configuration: Dual
Mounting Type: SMD
Number of Pins: 6
On Resistance Rds(on), P Channel: 0.85 Ohm
On Resistance Rds(on): 1.1 Ohm
Operating Temperature Range: -55°C to +150°C
Package / Case: SC-70
Power Dissipation: 300 mW
Rds(on) Test Voltage Vgs: -4.5 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: -820 mV
Transistor Case Style: SC-70
Transistor Polarity: P Channel
Voltage Vds Typ: -25 V
Voltage Vgs Max: -820 mV
Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes