Datasheet BSS138DW-7-F - Diodes MOSFET, NN CH, 50 V, SOT-363 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, NN CH, 50 V, SOT-363

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Docket:
BSS138DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
· · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Available in Lead Free/RoHS Compliant Version (Note 4) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Notes 5 and 6)

Specifications:

• Continuous Drain Current Id, N Channel: 200 mA
• Continuous Drain Current Id: 200 mA
• Current Id Max: 200 mA
• Drain Source Voltage Vds, N Channel: 50 V
• Drain Source Voltage Vds: 50 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on), N Channel: 1.4 Ohm
• On Resistance Rds(on): 3.5 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-363
• Power Dissipation: 200 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1.2 V
• Transistor Case Style: SOT-363
• Transistor Polarity: Dual N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 50 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

BSS138DW7F, BSS138DW 7 F