Datasheet SI7192DP-T1-GE3 - Vishay MOSFET, N, PPAK SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, PPAK SO-8

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Docket:
New Product
Si7192DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 60 A
• Current Id Max: 60 A
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 1.9 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: PowerPAK
• Power Dissipation Pd: 104 W
• Rds(on) Test Voltage Vgs: 20 V
• Rise Time: 10 ns
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1 V

RoHS: Y-Ex

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Andere Namen:

SI7192DPT1GE3, SI7192DP T1 GE3