Datasheet SI4642DY-T1-E3 - Vishay MOSFET, N, SO-8 + SCHO — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SO-8 + SCHO

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Docket:
Si4642DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.00375 at VGS = 10 V 0.0047 at VGS = 4.5 V ID (A)a 34 30 Qg (Typ.) 35.7 nC

Specifications:

• Continuous Drain Current Id: 34 A
• Current Id Max: 34 A
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 3.75 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC-8
• Power Dissipation Pd: 7.8 W
• Rds(on) Test Voltage Vgs: 20 V
• Rise Time: 180 ns
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1.5 V

RoHS: Y-Ex

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Andere Namen:

SI4642DYT1E3, SI4642DY T1 E3