Datasheet SI2312BDS-T1-GE3 - Vishay MOSFET, N, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SOT-23

Specifications:

• Continuous Drain Current Id: 5 A
• Current Id Max: 5 A
• Drain Source Voltage Vds: 20 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 31 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 750 mW
• Rds(on) Test Voltage Vgs: 20 V
• Rise Time: 30 ns
• Threshold Voltage Vgs Typ: 8 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 8 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 0.85 V
• Voltage Vgs th Min: 0.45 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Andere Namen:

SI2312BDST1GE3, SI2312BDS T1 GE3