Datasheet SIE810DF-T1-E3 - Vishay MOSFET, N, POLAR PAK — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, N, POLAR PAK

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Specifications:

• Base Number: 810
• Continuous Drain Current Id: 236 A
• Current Id Max: 60 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• N-channel Gate Charge: 90nC
• Number of Pins: 10
• On Resistance Rds(on): 1.4 MOhm
• On State Resistance @ Vgs = 2.5V: 2.7 MOhm
• On State Resistance @ Vgs = 4.5V: 1.6 MOhm
• On State resistance @ Vgs = 10V: 1.4 MOhm
• Package / Case: PolarPAK
• Power Dissipation Pd: 125 W
• Pulse Current Idm: 100 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.3 V
• Transistor Case Style: PolarPAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 1.3 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2 V
• Voltage Vgs th Min: 0.8 V

RoHS: Yes

Andere Namen:

SIE810DFT1E3, SIE810DF T1 E3