Datasheet SI4886DY - Vishay MOSFET, N, SO-8 — Datenblatt

Vishay SI4886DY

Part Number: SI4886DY

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si4886DY
New Product
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 9.5 A
  • Current Id Max: 9.5 A
  • Drain Source Voltage Vds: 30 V
  • Fall Time tf: 18 ns
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: SMD
  • N-channel Gate Charge: 14.5nC
  • Number of Pins: 8
  • Number of Transistors: 1
  • On Resistance Rds(on): 10 MOhm
  • On State Resistance @ Vgs = 4.5V: 13.5 MOhm
  • On State resistance @ Vgs = 10V: 10 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC
  • Power Dissipation Pd: 1.56 W
  • Pulse Current Idm: 50 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Rise Time: 5 ns
  • Threshold Voltage Vgs Typ: 800 mV
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Turn Off Time: 42 ns
  • Turn On Time: 14 ns
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Accessories:

  • Dow Corning - 2265931
  • Fischer Elektronik - ICK SMD A 5 SA
  • Fischer Elektronik - WLK 5
  • Roth Elektronik - RE932-01