Datasheet SI4484EY - Vishay MOSFET, N, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si4484EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)

Simulation Model

Specifications:

• Continuous Drain Current Id: 6.9 A
• Current Id Max: 4.8 A
• Drain Source Voltage Vds: 100 V
• Mounting Type: SMD
• N-channel Gate Charge: 24nC
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 34 MOhm
• On State resistance @ Vgs = 10V: 34 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.8 W
• Pulse Current Idm: 30 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5