Datasheet SI4864DY - Vishay MOSFET, N, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si4864DY
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 17 A
• Current Id Max: 17 A
• Drain Source Voltage Vds: 20 V
• Fall Time tf: 72 ns
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 47nC
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 3.5 MOhm
• On State Resistance @ Vgs = 2.5V: 3.5 MOhm
• On State Resistance @ Vgs = 4.5V: 3.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.6 W
• Pulse Current Idm: 60 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Rise Time: 44 ns
• Threshold Voltage Vgs Typ: 600 mV
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Turn Off Time: 150 ns
• Turn On Time: 40 ns
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 8 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

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