Datasheet SI9410BDY-T1-GE3 - Vishay N CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

• Continuous Drain Current Id: 8.1 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 24 MOhm
• Power Dissipation Pd: 2.5 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 1 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI9410BDYT1GE3, SI9410BDY T1 GE3