Datasheet SI7898DP-T1-E3 - Vishay N CHANNEL MOSFET, 150 V, 4.8 A, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 150 V, 4.8 A, SOIC

Specifications:

• Continuous Drain Current Id: 4.8 A
• Drain Source Voltage Vds: 150 V
• On Resistance Rds(on): 95 MOhm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI7898DPT1E3, SI7898DP T1 E3