Datasheet SI7866ADP-T1-GE3 - Vishay N CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

• Continuous Drain Current Id: 40 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 3 MOhm
• Power Dissipation Pd: 5.4 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 800 mV
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI7866ADPT1GE3, SI7866ADP T1 GE3