Datasheet SI7686DP-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 35 A, SOIC — Datenblatt

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Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 35 A, SOIC

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Docket:
Si7686DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0095 at VGS = 10 V 0.014 at VGS = 4.5 V ID (A)a 35 35 Qg (Typ.) 9.2 nC

Specifications:

• Continuous Drain Current Id: 35 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 14 MOhm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI7686DPT1GE3, SI7686DP T1 GE3