Datasheet SI7478DP-T1-GE3 - Vishay N CHANNEL MOSFET, 60 V, 20 A, SOIC — Datenblatt

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Manufacturer: Vishay

Description: N CHANNEL MOSFET, 60 V, 20 A, SOIC

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Docket:
Si7478DP
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.0075 at VGS = 10 V 0.0088 at VGS = 4.5 V ID (A) 20 18.5

Specifications:

• Continuous Drain Current Id: 20 A
• Drain Source Voltage Vds: 60 V
• On Resistance Rds(on): 8.8 MOhm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI7478DPT1GE3, SI7478DP T1 GE3