Datasheet SI7476DP-T1-GE3 - Vishay N CHANNEL MOSFET, 40 V, 25 A, SOIC — Datenblatt
Part Number: SI7476DP-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: N CHANNEL MOSFET, 40 V, 25 A, SOIC
Docket:
Si7476DP
Vishay Siliconix
N-Channel 40-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.0053 at VGS = 10 V 0.0066 at VGS = 4.5 V ID (A) 25 23
Specifications:
- Continuous Drain Current Id: 25 A
- Drain Source Voltage Vds: 40 V
- On Resistance Rds(on): 5.3 MOhm
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 1 V
- Transistor Polarity: N Channel
RoHS: Y-Ex
Andere Namen:
SI7476DPT1GE3, SI7476DP T1 GE3