Datasheet SI7386DP-T1-E3 - Vishay MOSFET, N CH, 30 V, 12 A, POWERPAK — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, N CH, 30 V, 12 A, POWERPAK

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Docket:
Si7386DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.007 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A) 19 17 Qg (Typ.) 11.5

Specifications:

• Continuous Drain Current Id: 12 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.0058 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: PowerPAKSO-8
• Transistor Polarity: N Channel
• RoHS: Y-Ex

Andere Namen:

SI7386DPT1E3, SI7386DP T1 E3