Datasheet SI4800BDY-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 9 A, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 9 A, SOIC

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Docket:
Si4800BDY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0185 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 9 7

Simulation Model

Specifications:

• Continuous Drain Current Id: 9 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 30 MOhm
• Rds(on) Test Voltage Vgs: 25 V
• Threshold Voltage Vgs Typ: 25 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI4800BDYT1GE3, SI4800BDY T1 GE3