Datasheet SI4446DY-T1-GE3 - Vishay N CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

• Continuous Drain Current Id: 3.9 A
• Drain Source Voltage Vds: 40 V
• On Resistance Rds(on): 33 MOhm
• Power Dissipation Pd: 1.1 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI4446DYT1GE3, SI4446DY T1 GE3