Datasheet SI4430BDY-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 20 A, SOIC — Datenblatt

Vishay SI4430BDY-T1-GE3

Part Number: SI4430BDY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 20 A, SOIC

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Docket:
Si4430BDY
Vishay Siliconix
N-Channel 30-V MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0045 at VGS = 10 V 0.006 at VGS = 4.5 V ID (A) 20 17 Qg (Typ.) 24

Specifications:

  • Continuous Drain Current Id: 20 A
  • Drain Source Voltage Vds: 30 V
  • On Resistance Rds(on): 6 MOhm
  • Rds(on) Test Voltage Vgs: 20 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI4430BDYT1GE3, SI4430BDY T1 GE3