Datasheet SI3460DV-T1-GE3 - Vishay N CHANNEL MOSFET, 20 V, 6.8 A — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 20 V, 6.8 A

Specifications:

• Continuous Drain Current Id: 6.8 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 27 MOhm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 450 mV
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI3460DVT1GE3, SI3460DV T1 GE3