Datasheet SI3430DV-T1-GE3 - Vishay N CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

• Continuous Drain Current Id: 2.4 A
• Drain Source Voltage Vds: 100 V
• On Resistance Rds(on): 170 MOhm
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI3430DVT1GE3, SI3430DV T1 GE3